Design of Experiment (DOE) Analysis of System Level ESD Noise Coupling to High-Speed Memory Modules

Design of Experiment (DOE) Analysis of System Level ESD Noise Coupling to High-Speed Memory Modules

This paper presents, for the first time, a comprehensive detailed design of experiment (DOE) based system level electrostatic discharge (ESD) coupling analysis of high-speed dynamic random access (DRAM) memory modules. The sensitive traces and planes on the high-speed DRAM modules (DDR3 and DDR4) ag...

Full description

Bibliographic Details
Main Authors: Jawad Yousaf, Muhammad Faisal, Jinsung Youn, Wansoo Nah
Format: Article
Language:English
Published: MDPI AG 2019-02-01
Series:Electronics
Subjects:
Electrostatic Discharge (ESD)
Dynamic Random Access Memory (DRAM)
ESD gun
3D model
numerical model
system level ESD
Online Access:https://www.mdpi.com/2079-9292/8/2/210

Internet

https://www.mdpi.com/2079-9292/8/2/210

Similar Items