Modeling of the Variation of Lateral Doping (VLD) Lateral Power Devices via 1-D Analysis Using Effective Concentration Profile Concept
The VLD technique has introduced for the propose of achieving the ideal surface electric field via a non-uniformly doped drift region. Yet, the ideal doping profile is impossible to be fulfilled in practical thus breaking the optimized lateral breakdown characteristic. In addition, the conventional...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8843944/ |