High-Uniformity and High Drain Current Density Enhancement-Mode AlGaN/GaN Gates-Seperating Groove HFET

High-Uniformity and High Drain Current Density Enhancement-Mode AlGaN/GaN Gates-Seperating Groove HFET

In this paper, we report on a novel E-mode AlGaN/GaN gates-seperating groove heterostructure field-effect transistor (GSG HFET). The current turn-on/off is controlled by changing gate voltage to regulate the horizontal energy band between the double gates. A threshold voltage of 0.23 V and a high dr...

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Bibliographic Details
Main Authors: Yuangang Wang, Yuanjie Lv, Xingye Zhou, Jiayun Yin, Tingting Han, Guodong Gu, Xubo Song, Xin Tan, Shaobo Dun, Hongyu Guo, Yulong Fang, Zhihong Feng, Shujun Cai
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
E-mdoe
high current density
high-uniformity threshold voltage
GSG HFET
Online Access:https://ieeexplore.ieee.org/document/8121975/

Internet

https://ieeexplore.ieee.org/document/8121975/

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