Fotoluminescência de nanocristais de Si produzidos por implantação iônica a quente: efeito da passivação em hidrogênio.

The intense research activity on Si nanostructures in the last decades has been motivating by their promising applications in optoelectronics and photonic devices. In this contribution we study the photoluminescence (PL) from Si nanocrystals (Si NCs) produced by hot implantation, after a post-anneal...

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Bibliographic Details
Main Authors: U. S. Sias, V. N. Obadowski
Format: Article
Language:Portuguese
Published: Instituto Federal de Educação, Ciência e Tecnologia Sul-Rio-Grandense 2010-01-01
Series:Revista Thema
Subjects:
Online Access:http://revistathema.ifsul.edu.br/index.php/thema/article/view/15/10