Defect phase diagram for doping of Ga2O3
For the case of n-type doping of β-Ga2O3 by group 14 dopants (C, Si, Ge, Sn), a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T), O partial pressures (pO2), and dopant concentrations. The underlying defect levels and formation energies are determ...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2018-04-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5019938 |