Fermi-Level Pinning Mechanism in MoS<sub>2</sub> Field-Effect Transistors Developed by Thermionic Emission Theory
Molybdenum disulfide (MoS<sub>2</sub>) field-effect transistors (FETs) with four different source and drain metallic electrodes (Au, Ag, Al, Cu) were fabricated by mechanical exfoliation and vacuum evaporation methods. The mobility of the devices was (Au) 21.01, (Ag) 23.15, (Al) 5.35 and...
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-04-01
|
| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/10/8/2754 |