Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results indicate that different density and height of nanowires impact graphene properties such as roughness, strain, and carrier concentration as well as density and type of...

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Bibliographic Details
Main Authors: Jakub Kierdaszuk, Piotr Kaźmierczak, Justyna Grzonka, Aleksandra Krajewska, Aleksandra Przewłoka, Wawrzyniec Kaszub, Zbigniew R. Zytkiewicz, Marta Sobanska, Maria Kamińska, Andrzej Wysmołek, Aneta Drabińska
Format: Article
Language:English
Published: Beilstein-Institut 2021-06-01
Series:Beilstein Journal of Nanotechnology
Subjects:
carrier concentration
gallium nitride
graphene
nanowires
raman spectroscopy
scattering on defects
strain
Online Access:https://doi.org/10.3762/bjnano.12.47

Internet

https://doi.org/10.3762/bjnano.12.47

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