ELECTROPHYSICAL MEASUREMENTS SOLID SOLUTIONS OF InxAl1–xAs
Purpose. Layers of InxAl1-xAs, grown at the Novosibirsk Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Science that are deliberately unalloyed by means of the MBE method on a semi-insulating substrate InP are widely used in micro-and optoelectronics of the microw...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Voronezh State University
2019-03-01
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| Series: | Конденсированные среды и межфазные границы |
| Subjects: |