Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning
Abstract We show that templating a Si surface with a focused beam of Si2+ or Si+ ions can create suitable nucleation sites for the subsequent growth of self-assembled Ge quantum dots by chemical vapor deposition. To determine the mechanism of patterning we use atomic force microscopy to show that, s...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2018-06-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-018-27512-z |