Electrical Properties of Nanoscale ZnS Thin Film Transistor
To understand the contact mechanism from electrical properties of the ZnS TFTs, ZnS was fabricated on SiOC as a gate insulator on a Si substrate. Ohmic contact without a potential barrier increased the leakage current, but Schottky contact decreased the leakage current because of a Schottky barrier...
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| Format: | Article |
| Language: | English |
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Hindawi Limited
2015-01-01
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| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2015/956101 |