An Inductor-Less, Discontinuous Current Source Gate Driver for SiC Devices
EMI has remained a limiting factor in driving the SiC MOSFETs to its maximum potential and achieving a trade-off between EMI and switching losses is a major challenge for the designers. In this paper, an inductor-less, discontinuous current source gate driver (DCSD) is proposed. Exclusion of inducto...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8664176/ |