High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction

High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction

Abstract Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their uniqu...

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Bibliographic Details
Main Authors: Menghan Jia, Fang Wang, Libin Tang, Jinzhong Xiang, Kar Seng Teng, Shu Ping Lau
Format: Article
Language:English
Published: SpringerOpen 2020-02-01
Series:Nanoscale Research Letters
Subjects:
β-Ga2O3
NiO
Heterojunction
UV photodetector
Online Access:http://link.springer.com/article/10.1186/s11671-020-3271-9

Internet

http://link.springer.com/article/10.1186/s11671-020-3271-9

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