High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
Abstract Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their uniqu...
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doaj-be6efa444e324528ad9f0ec59af389e92020-11-25T02:18:35ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2020-02-011511610.1186/s11671-020-3271-9High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 HeterojunctionMenghan Jia0Fang Wang1Libin Tang2Jinzhong Xiang3Kar Seng Teng4Shu Ping Lau5School of Materials Science and Engineering, Yunnan UniversitySchool of Materials Science and Engineering, Yunnan UniversityKunming Institute of PhysicsSchool of Physics and Astronomy, Yunnan UniversityCollege of Engineering, Swansea UniversityDepartment of Applied Physics, The Hong Kong Polytechnic UniversityAbstract Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga2O3 heterojunction was developed and investigated. The β-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of ( 2¯ $$ \overline{2} $$ 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW−1 under a 245-nm illumination (27 μWcm−2) and the maximum detectivity (D*) of 3.14 × 1012 cmHz1/2 W−1, which was attributed to the p-NiO/n-β-Ga2O3 heterojunction.http://link.springer.com/article/10.1186/s11671-020-3271-9β-Ga2O3NiOHeterojunctionUV photodetector |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Menghan Jia Fang Wang Libin Tang Jinzhong Xiang Kar Seng Teng Shu Ping Lau |
spellingShingle |
Menghan Jia Fang Wang Libin Tang Jinzhong Xiang Kar Seng Teng Shu Ping Lau High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction Nanoscale Research Letters β-Ga2O3 NiO Heterojunction UV photodetector |
author_facet |
Menghan Jia Fang Wang Libin Tang Jinzhong Xiang Kar Seng Teng Shu Ping Lau |
author_sort |
Menghan Jia |
title |
High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction |
title_short |
High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction |
title_full |
High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction |
title_fullStr |
High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction |
title_full_unstemmed |
High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction |
title_sort |
high-performance deep ultraviolet photodetector based on nio/β-ga2o3 heterojunction |
publisher |
SpringerOpen |
series |
Nanoscale Research Letters |
issn |
1931-7573 1556-276X |
publishDate |
2020-02-01 |
description |
Abstract Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga2O3 heterojunction was developed and investigated. The β-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of ( 2¯ $$ \overline{2} $$ 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW−1 under a 245-nm illumination (27 μWcm−2) and the maximum detectivity (D*) of 3.14 × 1012 cmHz1/2 W−1, which was attributed to the p-NiO/n-β-Ga2O3 heterojunction. |
topic |
β-Ga2O3 NiO Heterojunction UV photodetector |
url |
http://link.springer.com/article/10.1186/s11671-020-3271-9 |
work_keys_str_mv |
AT menghanjia highperformancedeepultravioletphotodetectorbasedonniobga2o3heterojunction AT fangwang highperformancedeepultravioletphotodetectorbasedonniobga2o3heterojunction AT libintang highperformancedeepultravioletphotodetectorbasedonniobga2o3heterojunction AT jinzhongxiang highperformancedeepultravioletphotodetectorbasedonniobga2o3heterojunction AT karsengteng highperformancedeepultravioletphotodetectorbasedonniobga2o3heterojunction AT shupinglau highperformancedeepultravioletphotodetectorbasedonniobga2o3heterojunction |
_version_ |
1724881193684434944 |