Direct growth of Ge1-xSnx films on Si using a cold-wall ultra-high-vacuum chemical-vapor-deposition system

Direct growth of Ge1-xSnx films on Si using a cold-wall ultra-high-vacuum chemical-vapor-deposition system

Germanium tin alloys were grown directly on Si substrate at low temperatures using a cold-wall ultra-high vacuum chemical vapor deposition system. Epitaxial growth was achieved by adopting commercial gas precursors of germane and stannic chloride without any carrier gases. The X-ray diffraction an...

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Bibliographic Details
Main Authors: Aboozar eMosleh, Murtadha A. Alher, Larry C. Cousar, Wei eDu, Seyed Amir eGhetmiri, Thach ePham, Joshua M. Grant, Greg eSun, Richard A. Soref, Baohua eLi, Hameed A. Naseem, Shui-Qing eYu
Format: Article
Language:English
Published: Frontiers Media S.A. 2015-04-01
Series:Frontiers in Materials
Subjects:
Photoluminescence
chemical vapor deposition (CVD)
Si photonics
GeSn
Ge alloys
Online Access:http://journal.frontiersin.org/Journal/10.3389/fmats.2015.00030/full

Internet

http://journal.frontiersin.org/Journal/10.3389/fmats.2015.00030/full

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