Optimization of Processing Parameters for Water-Jet-Assisted Laser Etching of Polycrystalline Silicon

Liquid-assisted laser technology is used to etch defect-free materials for high-precision electronics and machinery. This study investigates water-jet-assisted laser etching of polysilicon material. The depths and widths of the etched grooves were investigated for different water-jet incident angles...

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Main Authors: Xuehui Chen, Xiang Li, Chao Wu, Yuping Ma, Yao Zhang, Lei Huang, Wei Liu
Format: Article
Language:English
Published: MDPI AG 2019-05-01
Series:Applied Sciences
Subjects:
Online Access:https://www.mdpi.com/2076-3417/9/9/1882
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spelling doaj-bea86594accf432ab5abbde8b64569572020-11-25T02:03:47ZengMDPI AGApplied Sciences2076-34172019-05-0199188210.3390/app9091882app9091882Optimization of Processing Parameters for Water-Jet-Assisted Laser Etching of Polycrystalline SiliconXuehui Chen0Xiang Li1Chao Wu2Yuping Ma3Yao Zhang4Lei Huang5Wei Liu6College of Mechanical and Electrical Engineering, Anhui Jianzhu University, Hefei 230601, ChinaCollege of Mechanical and Electrical Engineering, Anhui Jianzhu University, Hefei 230601, ChinaCollege of Mechanical and Electrical Engineering, Anhui Jianzhu University, Hefei 230601, ChinaCollege of Mechanical and Electrical Engineering, Anhui Jianzhu University, Hefei 230601, ChinaCollege of Mechanical and Electrical Engineering, Anhui Jianzhu University, Hefei 230601, ChinaCollege of Mechanical and Electrical Engineering, Anhui Jianzhu University, Hefei 230601, ChinaCollege of Mechanical and Electrical Engineering, Anhui Jianzhu University, Hefei 230601, ChinaLiquid-assisted laser technology is used to etch defect-free materials for high-precision electronics and machinery. This study investigates water-jet-assisted laser etching of polysilicon material. The depths and widths of the etched grooves were investigated for different water-jet incident angles and velocities. To select optimal parameters for a composite etching processing, the results of many tests must be compared, and at least one set of good processing parameter combinations must be identified. Herein, the influence of different parameters on the processing results is studied using an orthogonal test method. The results demonstrate that the depths and widths of the processing grooves were nearly identical at water-jet angles of 30°and 60°; however, the 60° incidence conferred a slight advantage over 30° incidence. The section taper, section depth, and surface topography were optimized at a water-jet velocity of 24-m/s, 1.1-ms laser pulse width, 40-Hz frequency, and 180-A current. Under these conditions, the section taper and groove depth were 1.2° and 1.88 mm, respectively. The groove surfaces exhibited no splitting, slagging, or other defects, and no recast layers were visible.https://www.mdpi.com/2076-3417/9/9/1882laser etchingwater jetpolycrystalline siliconorthogonal test
collection DOAJ
language English
format Article
sources DOAJ
author Xuehui Chen
Xiang Li
Chao Wu
Yuping Ma
Yao Zhang
Lei Huang
Wei Liu
spellingShingle Xuehui Chen
Xiang Li
Chao Wu
Yuping Ma
Yao Zhang
Lei Huang
Wei Liu
Optimization of Processing Parameters for Water-Jet-Assisted Laser Etching of Polycrystalline Silicon
Applied Sciences
laser etching
water jet
polycrystalline silicon
orthogonal test
author_facet Xuehui Chen
Xiang Li
Chao Wu
Yuping Ma
Yao Zhang
Lei Huang
Wei Liu
author_sort Xuehui Chen
title Optimization of Processing Parameters for Water-Jet-Assisted Laser Etching of Polycrystalline Silicon
title_short Optimization of Processing Parameters for Water-Jet-Assisted Laser Etching of Polycrystalline Silicon
title_full Optimization of Processing Parameters for Water-Jet-Assisted Laser Etching of Polycrystalline Silicon
title_fullStr Optimization of Processing Parameters for Water-Jet-Assisted Laser Etching of Polycrystalline Silicon
title_full_unstemmed Optimization of Processing Parameters for Water-Jet-Assisted Laser Etching of Polycrystalline Silicon
title_sort optimization of processing parameters for water-jet-assisted laser etching of polycrystalline silicon
publisher MDPI AG
series Applied Sciences
issn 2076-3417
publishDate 2019-05-01
description Liquid-assisted laser technology is used to etch defect-free materials for high-precision electronics and machinery. This study investigates water-jet-assisted laser etching of polysilicon material. The depths and widths of the etched grooves were investigated for different water-jet incident angles and velocities. To select optimal parameters for a composite etching processing, the results of many tests must be compared, and at least one set of good processing parameter combinations must be identified. Herein, the influence of different parameters on the processing results is studied using an orthogonal test method. The results demonstrate that the depths and widths of the processing grooves were nearly identical at water-jet angles of 30°and 60°; however, the 60° incidence conferred a slight advantage over 30° incidence. The section taper, section depth, and surface topography were optimized at a water-jet velocity of 24-m/s, 1.1-ms laser pulse width, 40-Hz frequency, and 180-A current. Under these conditions, the section taper and groove depth were 1.2° and 1.88 mm, respectively. The groove surfaces exhibited no splitting, slagging, or other defects, and no recast layers were visible.
topic laser etching
water jet
polycrystalline silicon
orthogonal test
url https://www.mdpi.com/2076-3417/9/9/1882
work_keys_str_mv AT xuehuichen optimizationofprocessingparametersforwaterjetassistedlaseretchingofpolycrystallinesilicon
AT xiangli optimizationofprocessingparametersforwaterjetassistedlaseretchingofpolycrystallinesilicon
AT chaowu optimizationofprocessingparametersforwaterjetassistedlaseretchingofpolycrystallinesilicon
AT yupingma optimizationofprocessingparametersforwaterjetassistedlaseretchingofpolycrystallinesilicon
AT yaozhang optimizationofprocessingparametersforwaterjetassistedlaseretchingofpolycrystallinesilicon
AT leihuang optimizationofprocessingparametersforwaterjetassistedlaseretchingofpolycrystallinesilicon
AT weiliu optimizationofprocessingparametersforwaterjetassistedlaseretchingofpolycrystallinesilicon
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