Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes

Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes

Resistive switching in metal oxides is related to the migration of donor defects. Here Baeumer et al. use in operandoX-ray spectromicroscopy to quantify the doping locally and show that small local variations in the donor concentration result in large variations in the device resistance.

Bibliographic Details
Main Authors: Christoph Baeumer, Christoph Schmitz, Astrid Marchewka, David N. Mueller, Richard Valenta, Johanna Hackl, Nicolas Raab, Steven P. Rogers, M. Imtiaz Khan, Slavomir Nemsak, Moonsub Shim, Stephan Menzel, Claus Michael Schneider, Rainer Waser, Regina Dittmann
Format: Article
Language:English
Published: Nature Publishing Group 2016-08-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/ncomms12398

Internet

https://doi.org/10.1038/ncomms12398

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