Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes

Resistive switching in metal oxides is related to the migration of donor defects. Here Baeumer et al. use in operandoX-ray spectromicroscopy to quantify the doping locally and show that small local variations in the donor concentration result in large variations in the device resistance.

Bibliographic Details
Main Authors:	Christoph Baeumer, Christoph Schmitz, Astrid Marchewka, David N. Mueller, Richard Valenta, Johanna Hackl, Nicolas Raab, Steven P. Rogers, M. Imtiaz Khan, Slavomir Nemsak, Moonsub Shim, Stephan Menzel, Claus Michael Schneider, Rainer Waser, Regina Dittmann
Format:	Article
Language:	English
Published:	Nature Publishing Group 2016-08-01
Series:	Nature Communications
Online Access:	https://doi.org/10.1038/ncomms12398

id	doaj-bf6c3f4cacb943e7929d9dfd86966d52
record_format	Article
spelling	doaj-bf6c3f4cacb943e7929d9dfd86966d522021-05-11T11:02:33ZengNature Publishing GroupNature Communications2041-17232016-08-01711710.1038/ncomms12398Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodesChristoph Baeumer0Christoph Schmitz1Astrid Marchewka2David N. Mueller3Richard Valenta4Johanna Hackl5Nicolas Raab6Steven P. Rogers7M. Imtiaz Khan8Slavomir Nemsak9Moonsub Shim10Stephan Menzel11Claus Michael Schneider12Rainer Waser13Regina Dittmann14Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FITPeter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FITInstitute of Materials in Electrical Engineering and Information Technology II, RWTH Aachen UniversityPeter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FITPeter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FITPeter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FITPeter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FITDepartment of Materials Science and Engineering and Materials Research Laboratory, University of IllinoisPeter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FITPeter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FITDepartment of Materials Science and Engineering and Materials Research Laboratory, University of IllinoisPeter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FITPeter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FITPeter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FITPeter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FITResistive switching in metal oxides is related to the migration of donor defects. Here Baeumer et al. use in operandoX-ray spectromicroscopy to quantify the doping locally and show that small local variations in the donor concentration result in large variations in the device resistance.https://doi.org/10.1038/ncomms12398
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Christoph Baeumer Christoph Schmitz Astrid Marchewka David N. Mueller Richard Valenta Johanna Hackl Nicolas Raab Steven P. Rogers M. Imtiaz Khan Slavomir Nemsak Moonsub Shim Stephan Menzel Claus Michael Schneider Rainer Waser Regina Dittmann
spellingShingle	Christoph Baeumer Christoph Schmitz Astrid Marchewka David N. Mueller Richard Valenta Johanna Hackl Nicolas Raab Steven P. Rogers M. Imtiaz Khan Slavomir Nemsak Moonsub Shim Stephan Menzel Claus Michael Schneider Rainer Waser Regina Dittmann Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes Nature Communications
author_facet	Christoph Baeumer Christoph Schmitz Astrid Marchewka David N. Mueller Richard Valenta Johanna Hackl Nicolas Raab Steven P. Rogers M. Imtiaz Khan Slavomir Nemsak Moonsub Shim Stephan Menzel Claus Michael Schneider Rainer Waser Regina Dittmann
author_sort	Christoph Baeumer
title	Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
title_short	Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
title_full	Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
title_fullStr	Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
title_full_unstemmed	Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
title_sort	quantifying redox-induced schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
publisher	Nature Publishing Group
series	Nature Communications
issn	2041-1723
publishDate	2016-08-01
description	Resistive switching in metal oxides is related to the migration of donor defects. Here Baeumer et al. use in operandoX-ray spectromicroscopy to quantify the doping locally and show that small local variations in the donor concentration result in large variations in the device resistance.
url	https://doi.org/10.1038/ncomms12398
work_keys_str_mv	AT christophbaeumer quantifyingredoxinducedschottkybarriervariationsinmemristivedevicesviainoperandospectromicroscopywithgrapheneelectrodes AT christophschmitz quantifyingredoxinducedschottkybarriervariationsinmemristivedevicesviainoperandospectromicroscopywithgrapheneelectrodes AT astridmarchewka quantifyingredoxinducedschottkybarriervariationsinmemristivedevicesviainoperandospectromicroscopywithgrapheneelectrodes AT davidnmueller quantifyingredoxinducedschottkybarriervariationsinmemristivedevicesviainoperandospectromicroscopywithgrapheneelectrodes AT richardvalenta quantifyingredoxinducedschottkybarriervariationsinmemristivedevicesviainoperandospectromicroscopywithgrapheneelectrodes AT johannahackl quantifyingredoxinducedschottkybarriervariationsinmemristivedevicesviainoperandospectromicroscopywithgrapheneelectrodes AT nicolasraab quantifyingredoxinducedschottkybarriervariationsinmemristivedevicesviainoperandospectromicroscopywithgrapheneelectrodes AT stevenprogers quantifyingredoxinducedschottkybarriervariationsinmemristivedevicesviainoperandospectromicroscopywithgrapheneelectrodes AT mimtiazkhan quantifyingredoxinducedschottkybarriervariationsinmemristivedevicesviainoperandospectromicroscopywithgrapheneelectrodes AT slavomirnemsak quantifyingredoxinducedschottkybarriervariationsinmemristivedevicesviainoperandospectromicroscopywithgrapheneelectrodes AT moonsubshim quantifyingredoxinducedschottkybarriervariationsinmemristivedevicesviainoperandospectromicroscopywithgrapheneelectrodes AT stephanmenzel quantifyingredoxinducedschottkybarriervariationsinmemristivedevicesviainoperandospectromicroscopywithgrapheneelectrodes AT clausmichaelschneider quantifyingredoxinducedschottkybarriervariationsinmemristivedevicesviainoperandospectromicroscopywithgrapheneelectrodes AT rainerwaser quantifyingredoxinducedschottkybarriervariationsinmemristivedevicesviainoperandospectromicroscopywithgrapheneelectrodes AT reginadittmann quantifyingredoxinducedschottkybarriervariationsinmemristivedevicesviainoperandospectromicroscopywithgrapheneelectrodes
_version_	1721447229402644480

Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes

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