Characterization of intrinsic subgap density-of-states in exfoliated MoS2 FETs using a multi-frequency capacitance-conductance technique
A multi-frequency capacitance-conductance technique is proposed for characterizing the intrinsic density-of-states (DOS: gint(E)) inside an energy bandgap range (EV < E < EC) by de-embedding the structure-dependent parameters such as parasitic capacitance and resistance in a fabricated exfolia...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4985752 |