Characterization of intrinsic subgap density-of-states in exfoliated MoS2 FETs using a multi-frequency capacitance-conductance technique
A multi-frequency capacitance-conductance technique is proposed for characterizing the intrinsic density-of-states (DOS: gint(E)) inside an energy bandgap range (EV < E < EC) by de-embedding the structure-dependent parameters such as parasitic capacitance and resistance in a fabricated exfolia...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4985752 |
| Summary: | A multi-frequency capacitance-conductance technique is proposed for characterizing the intrinsic density-of-states (DOS: gint(E)) inside an energy bandgap range (EV < E < EC) by de-embedding the structure-dependent parameters such as parasitic capacitance and resistance in a fabricated exfoliated molybdenum disulfide (MoS2) field effect transistor (EM-FET). The proposed technique uses the measured frequency-dispersive capacitance (Cm) and conductance (Gm=1/Rm=ωCmDm) data with the measured dissipation factor Dm(=Gm/ωCm) at a frequency range of 0.3 kHz to 10 kHz. To extract gint(E), an equivalent circuit model of the MoS2 FET converted from a two-element model for the parallel-mode (Cm-Dm) measurement was developed with this technique. |
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| ISSN: | 2158-3226 |