Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum...

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Bibliographic Details
Main Authors: Xiaowei Wang, Feng Liang, Degang Zhao, Zongshun Liu, Jianjun Zhu, Jing Yang
Format: Article
Language:English
Published: SpringerOpen 2020-10-01
Series:Nanoscale Research Letters
Subjects:
GaN cap layer
Piezoelectric field
Localization states
Online Access:http://link.springer.com/article/10.1186/s11671-020-03420-y

Internet

http://link.springer.com/article/10.1186/s11671-020-03420-y

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