Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum...
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2020-10-01
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doaj-bffbe44a4ac54b1d8894277940bfbf432020-11-25T03:58:18ZengSpringerOpenNanoscale Research Letters1556-276X2020-10-011511810.1186/s11671-020-03420-yInvestigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer ThicknessXiaowei Wang0Feng Liang1Degang Zhao2Zongshun Liu3Jianjun Zhu4Jing Yang5State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of SciencesState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of SciencesState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of SciencesState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of SciencesState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of SciencesState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of SciencesAbstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.http://link.springer.com/article/10.1186/s11671-020-03420-yGaN cap layerPiezoelectric fieldLocalization states |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Xiaowei Wang Feng Liang Degang Zhao Zongshun Liu Jianjun Zhu Jing Yang |
spellingShingle |
Xiaowei Wang Feng Liang Degang Zhao Zongshun Liu Jianjun Zhu Jing Yang Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness Nanoscale Research Letters GaN cap layer Piezoelectric field Localization states |
author_facet |
Xiaowei Wang Feng Liang Degang Zhao Zongshun Liu Jianjun Zhu Jing Yang |
author_sort |
Xiaowei Wang |
title |
Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness |
title_short |
Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness |
title_full |
Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness |
title_fullStr |
Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness |
title_full_unstemmed |
Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness |
title_sort |
investigations on the optical properties of ingan/gan multiple quantum wells with varying gan cap layer thickness |
publisher |
SpringerOpen |
series |
Nanoscale Research Letters |
issn |
1556-276X |
publishDate |
2020-10-01 |
description |
Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer. |
topic |
GaN cap layer Piezoelectric field Localization states |
url |
http://link.springer.com/article/10.1186/s11671-020-03420-y |
work_keys_str_mv |
AT xiaoweiwang investigationsontheopticalpropertiesofinganganmultiplequantumwellswithvaryinggancaplayerthickness AT fengliang investigationsontheopticalpropertiesofinganganmultiplequantumwellswithvaryinggancaplayerthickness AT degangzhao investigationsontheopticalpropertiesofinganganmultiplequantumwellswithvaryinggancaplayerthickness AT zongshunliu investigationsontheopticalpropertiesofinganganmultiplequantumwellswithvaryinggancaplayerthickness AT jianjunzhu investigationsontheopticalpropertiesofinganganmultiplequantumwellswithvaryinggancaplayerthickness AT jingyang investigationsontheopticalpropertiesofinganganmultiplequantumwellswithvaryinggancaplayerthickness |
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1724458163731693568 |