Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum...

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Main Authors:	Xiaowei Wang, Feng Liang, Degang Zhao, Zongshun Liu, Jianjun Zhu, Jing Yang
Format:	Article
Language:	English
Published:	SpringerOpen 2020-10-01
Series:	Nanoscale Research Letters
Subjects:	GaN cap layer Piezoelectric field Localization states
Online Access:	http://link.springer.com/article/10.1186/s11671-020-03420-y

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spelling	doaj-bffbe44a4ac54b1d8894277940bfbf432020-11-25T03:58:18ZengSpringerOpenNanoscale Research Letters1556-276X2020-10-011511810.1186/s11671-020-03420-yInvestigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer ThicknessXiaowei Wang0Feng Liang1Degang Zhao2Zongshun Liu3Jianjun Zhu4Jing Yang5State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of SciencesState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of SciencesState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of SciencesState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of SciencesState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of SciencesState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of SciencesAbstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.http://link.springer.com/article/10.1186/s11671-020-03420-yGaN cap layerPiezoelectric fieldLocalization states
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Xiaowei Wang Feng Liang Degang Zhao Zongshun Liu Jianjun Zhu Jing Yang
spellingShingle	Xiaowei Wang Feng Liang Degang Zhao Zongshun Liu Jianjun Zhu Jing Yang Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness Nanoscale Research Letters GaN cap layer Piezoelectric field Localization states
author_facet	Xiaowei Wang Feng Liang Degang Zhao Zongshun Liu Jianjun Zhu Jing Yang
author_sort	Xiaowei Wang
title	Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
title_short	Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
title_full	Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
title_fullStr	Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
title_full_unstemmed	Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
title_sort	investigations on the optical properties of ingan/gan multiple quantum wells with varying gan cap layer thickness
publisher	SpringerOpen
series	Nanoscale Research Letters
issn	1556-276X
publishDate	2020-10-01
description	Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.
topic	GaN cap layer Piezoelectric field Localization states
url	http://link.springer.com/article/10.1186/s11671-020-03420-y
work_keys_str_mv	AT xiaoweiwang investigationsontheopticalpropertiesofinganganmultiplequantumwellswithvaryinggancaplayerthickness AT fengliang investigationsontheopticalpropertiesofinganganmultiplequantumwellswithvaryinggancaplayerthickness AT degangzhao investigationsontheopticalpropertiesofinganganmultiplequantumwellswithvaryinggancaplayerthickness AT zongshunliu investigationsontheopticalpropertiesofinganganmultiplequantumwellswithvaryinggancaplayerthickness AT jianjunzhu investigationsontheopticalpropertiesofinganganmultiplequantumwellswithvaryinggancaplayerthickness AT jingyang investigationsontheopticalpropertiesofinganganmultiplequantumwellswithvaryinggancaplayerthickness
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Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

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