Circuit design with Independent Double Gate Transistors

Circuits with transistors using independently controlled gates have been proposed to reduce the number of transistors and to increase the logic density per area. This paper introduces a novel Vertical Slit Field Effect Transistor with unique independent double gate properties to demonstrate the poss...

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Bibliographic Details
Main Authors: M. Weis, R. Emling, D. Schmitt-Landsiedel
Format: Article
Language:deu
Published: Copernicus Publications 2009-05-01
Series:Advances in Radio Science
Online Access:http://www.adv-radio-sci.net/7/231/2009/ars-7-231-2009.pdf