Circuit design with Independent Double Gate Transistors

Circuit design with Independent Double Gate Transistors

Circuits with transistors using independently controlled gates have been proposed to reduce the number of transistors and to increase the logic density per area. This paper introduces a novel Vertical Slit Field Effect Transistor with unique independent double gate properties to demonstrate the poss...

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Bibliographic Details
Main Authors: M. Weis, R. Emling, D. Schmitt-Landsiedel
Format: Article
Language:deu
Published: Copernicus Publications 2009-05-01
Series:Advances in Radio Science
Online Access:http://www.adv-radio-sci.net/7/231/2009/ars-7-231-2009.pdf
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spelling doaj-c006754df33b46628eee8c453aef34d92020-11-24T22:27:10ZdeuCopernicus PublicationsAdvances in Radio Science 1684-99651684-99732009-05-017231236Circuit design with Independent Double Gate TransistorsM. WeisR. EmlingD. Schmitt-LandsiedelCircuits with transistors using independently controlled gates have been proposed to reduce the number of transistors and to increase the logic density per area. This paper introduces a novel Vertical Slit Field Effect Transistor with unique independent double gate properties to demonstrate the possible advantages for independent double gate circuits. A new adder circuit is proposed, where the power could be reduced by one fifth and the area by on third compared to a tied gate configuration. http://www.adv-radio-sci.net/7/231/2009/ars-7-231-2009.pdf
collection DOAJ
language deu
format Article
sources DOAJ
author M. Weis
R. Emling
D. Schmitt-Landsiedel
spellingShingle M. Weis
R. Emling
D. Schmitt-Landsiedel
Circuit design with Independent Double Gate Transistors
Advances in Radio Science
author_facet M. Weis
R. Emling
D. Schmitt-Landsiedel
author_sort M. Weis
title Circuit design with Independent Double Gate Transistors
title_short Circuit design with Independent Double Gate Transistors
title_full Circuit design with Independent Double Gate Transistors
title_fullStr Circuit design with Independent Double Gate Transistors
title_full_unstemmed Circuit design with Independent Double Gate Transistors
title_sort circuit design with independent double gate transistors
publisher Copernicus Publications
series Advances in Radio Science
issn 1684-9965
1684-9973
publishDate 2009-05-01
description Circuits with transistors using independently controlled gates have been proposed to reduce the number of transistors and to increase the logic density per area. This paper introduces a novel Vertical Slit Field Effect Transistor with unique independent double gate properties to demonstrate the possible advantages for independent double gate circuits. A new adder circuit is proposed, where the power could be reduced by one fifth and the area by on third compared to a tied gate configuration.
url http://www.adv-radio-sci.net/7/231/2009/ars-7-231-2009.pdf
work_keys_str_mv AT mweis circuitdesignwithindependentdoublegatetransistors
AT remling circuitdesignwithindependentdoublegatetransistors
AT dschmittlandsiedel circuitdesignwithindependentdoublegatetransistors
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