High field-effect mobility at the (Sr,Ba)SnO3/BaSnO3 interface
A perovskite oxide, BaSnO3, has been classified as one of transparent conducting materials with high electron mobility, and its application for field-effect transistors has been the focus of recent research. Here we report transistor operation in BaSnO3-based heterostructures with atomically smooth...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4961637 |