A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

Abstract In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced. Through these methods, the DF-TFET with high on-state current, switching...

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Bibliographic Details
Main Authors: Shupeng Chen, Shulong Wang, Hongxia Liu, Tao Han, Haiwu Xie, Chen Chong
Format: Article
Language:English
Published: SpringerOpen 2020-10-01
Series:Nanoscale Research Letters
Subjects:
Tunnel FET
Dopingless
Fin-shaped channel
Line tunneling junction
Stack gate oxide
Online Access:http://link.springer.com/article/10.1186/s11671-020-03429-3

Internet

http://link.springer.com/article/10.1186/s11671-020-03429-3

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