Effects of oxygen and moisture on the I-V characteristics of TiO2 thin films
Current-voltage (I-V) characteristics well reveal the resistive switching performance of materials promising for the next-generation memory-resistance random access memory (ReRAM). It has been observed that the atmospheric environment can affect the resistive switching performance, but the origin of...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2018-09-01
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| Series: | Journal of Materiomics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352847818300054 |