Understanding Turn-On Transients of SiC High-Power Modules: Drain-Source Voltage Plateau Characteristics
The SiC (silicon carbide) high-power module has great potential to replace the IGBT (insulated gate bipolar transistor) power module in high-frequency and high-power applications, due to the superior properties of fast switching and low power loss, however, when the SiC high-power module operates un...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-07-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/13/15/3802 |