A Convenient and Effective Method to Deposit Low-Defect-Density nc-Si:H Thin Film by PECVD

A Convenient and Effective Method to Deposit Low-Defect-Density nc-Si:H Thin Film by PECVD

Abstract Hydrogenated nanocrystalline silicon (nc-Si:H) thin film has received a great deal of attention as a promising material for flat panel display transistors, solar cells, etc. However, the multiphase structure of nc-Si:H leads to many defects. One of the major challenges is how to reduce the...

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Bibliographic Details
Main Authors: Yuwei Wang, Hong Liu, Wenzhong Shen
Format: Article
Language:English
Published: SpringerOpen 2018-08-01
Series:Nanoscale Research Letters
Subjects:
Hydrogenated nanocrystalline silicon
PECVD
Deposition pressure
Ion bombardment
Defect density
Online Access:http://link.springer.com/article/10.1186/s11671-018-2641-z

Internet

http://link.springer.com/article/10.1186/s11671-018-2641-z

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