Development of Catalytic-CVD SiN<sub>x</sub> Passivation Process for AlGaN/GaN-on-Si HEMTs

Development of Catalytic-CVD SiN<sub>x</sub> Passivation Process for AlGaN/GaN-on-Si HEMTs

We optimized a silicon nitride (SiN<sub>x</sub>) passivation process using a catalytic-chemical vapor deposition (Cat-CVD) system to suppress the current collapse phenomenon of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs). The optimized Cat-CVD SiN<sub>x</sub> f...

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Bibliographic Details
Main Authors: Myoung-Jin Kang, Hyun-Seop Kim, Ho-Young Cha, Kwang-Seok Seo
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Crystals
Subjects:
AlGaN/GaN
high electron mobility transistor
catalytic-CVD
SiN<sub>x</sub> passivation
current collapse
Online Access:https://www.mdpi.com/2073-4352/10/9/842

Internet

https://www.mdpi.com/2073-4352/10/9/842

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