Development of Catalytic-CVD SiN<sub>x</sub> Passivation Process for AlGaN/GaN-on-Si HEMTs

Development of Catalytic-CVD SiN<sub>x</sub> Passivation Process for AlGaN/GaN-on-Si HEMTs

We optimized a silicon nitride (SiN<sub>x</sub>) passivation process using a catalytic-chemical vapor deposition (Cat-CVD) system to suppress the current collapse phenomenon of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs). The optimized Cat-CVD SiN<sub>x</sub> f...

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Main Authors: Myoung-Jin Kang, Hyun-Seop Kim, Ho-Young Cha, Kwang-Seok Seo
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Crystals
Subjects:
AlGaN/GaN
high electron mobility transistor
catalytic-CVD
SiN<sub>x</sub> passivation
current collapse
Online Access:https://www.mdpi.com/2073-4352/10/9/842
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spelling doaj-c0c58b088d304400b58a4983f60a2ddc2020-11-25T03:39:56ZengMDPI AGCrystals2073-43522020-09-011084284210.3390/cryst10090842Development of Catalytic-CVD SiN<sub>x</sub> Passivation Process for AlGaN/GaN-on-Si HEMTsMyoung-Jin Kang0Hyun-Seop Kim1Ho-Young Cha2Kwang-Seok Seo3Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, KoreaSchool of Electronic and Electrical Engineering, Hongik University, Seoul 04066, KoreaSchool of Electronic and Electrical Engineering, Hongik University, Seoul 04066, KoreaDepartment of Electrical and Computer Engineering, Seoul National University, Seoul 08826, KoreaWe optimized a silicon nitride (SiN<sub>x</sub>) passivation process using a catalytic-chemical vapor deposition (Cat-CVD) system to suppress the current collapse phenomenon of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs). The optimized Cat-CVD SiN<sub>x</sub> film exhibited a high film density of 2.7 g/cm<sup>3</sup> with a low wet etch rate (buffered oxide etchant (BOE) 10:1) of 2 nm/min and a breakdown field of 8.2 MV/cm. The AlGaN/GaN-on-Si HEMT fabricated by the optimized Cat-CVD SiN<sub>x</sub> passivation process, which had a gate length of 1.5 μm and a source-to-drain distance of 6 μm, exhibited the maximum drain current density of 670 mA/mm and the maximum transconductance of 162 mS/mm with negligible hysteresis. We found that the optimized SiN<sub>x</sub> film had positive charges, which were responsible for suppressing the current collapse phenomenon.https://www.mdpi.com/2073-4352/10/9/842AlGaN/GaNhigh electron mobility transistorcatalytic-CVDSiN<sub>x</sub> passivationcurrent collapse
collection DOAJ
language English
format Article
sources DOAJ
author Myoung-Jin Kang
Hyun-Seop Kim
Ho-Young Cha
Kwang-Seok Seo
spellingShingle Myoung-Jin Kang
Hyun-Seop Kim
Ho-Young Cha
Kwang-Seok Seo
Development of Catalytic-CVD SiN<sub>x</sub> Passivation Process for AlGaN/GaN-on-Si HEMTs
Crystals
AlGaN/GaN
high electron mobility transistor
catalytic-CVD
SiN<sub>x</sub> passivation
current collapse
author_facet Myoung-Jin Kang
Hyun-Seop Kim
Ho-Young Cha
Kwang-Seok Seo
author_sort Myoung-Jin Kang
title Development of Catalytic-CVD SiN<sub>x</sub> Passivation Process for AlGaN/GaN-on-Si HEMTs
title_short Development of Catalytic-CVD SiN<sub>x</sub> Passivation Process for AlGaN/GaN-on-Si HEMTs
title_full Development of Catalytic-CVD SiN<sub>x</sub> Passivation Process for AlGaN/GaN-on-Si HEMTs
title_fullStr Development of Catalytic-CVD SiN<sub>x</sub> Passivation Process for AlGaN/GaN-on-Si HEMTs
title_full_unstemmed Development of Catalytic-CVD SiN<sub>x</sub> Passivation Process for AlGaN/GaN-on-Si HEMTs
title_sort development of catalytic-cvd sin<sub>x</sub> passivation process for algan/gan-on-si hemts
publisher MDPI AG
series Crystals
issn 2073-4352
publishDate 2020-09-01
description We optimized a silicon nitride (SiN<sub>x</sub>) passivation process using a catalytic-chemical vapor deposition (Cat-CVD) system to suppress the current collapse phenomenon of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs). The optimized Cat-CVD SiN<sub>x</sub> film exhibited a high film density of 2.7 g/cm<sup>3</sup> with a low wet etch rate (buffered oxide etchant (BOE) 10:1) of 2 nm/min and a breakdown field of 8.2 MV/cm. The AlGaN/GaN-on-Si HEMT fabricated by the optimized Cat-CVD SiN<sub>x</sub> passivation process, which had a gate length of 1.5 μm and a source-to-drain distance of 6 μm, exhibited the maximum drain current density of 670 mA/mm and the maximum transconductance of 162 mS/mm with negligible hysteresis. We found that the optimized SiN<sub>x</sub> film had positive charges, which were responsible for suppressing the current collapse phenomenon.
topic AlGaN/GaN
high electron mobility transistor
catalytic-CVD
SiN<sub>x</sub> passivation
current collapse
url https://www.mdpi.com/2073-4352/10/9/842
work_keys_str_mv AT myoungjinkang developmentofcatalyticcvdsinsubxsubpassivationprocessforalganganonsihemts
AT hyunseopkim developmentofcatalyticcvdsinsubxsubpassivationprocessforalganganonsihemts
AT hoyoungcha developmentofcatalyticcvdsinsubxsubpassivationprocessforalganganonsihemts
AT kwangseokseo developmentofcatalyticcvdsinsubxsubpassivationprocessforalganganonsihemts
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