Tuning the resistive switching in tantalum oxide-based memristors by annealing

Tuning the resistive switching in tantalum oxide-based memristors by annealing

A key step in engineering resistive switching is the ability to control the device switching behavior. Here, we investigate the possibility to tune the resistive switching of tantalum oxide (TaOx)-based memristors from a non-switchable state to a switchable state by applying post-fabrication anneali...

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Bibliographic Details
Main Authors: Yang Li, Y. Eren Suyolcu, Simone Sanna, Dennis Valbjørn Christensen, Marie Lund Traulsen, Eugen Stamate, Christian Søndergaard Pedersen, Peter A. van Aken, Juan Maria García Lastra, Vincenzo Esposito, Nini Pryds
Format: Article
Language:English
Published: AIP Publishing LLC 2020-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0004722

Internet

http://dx.doi.org/10.1063/5.0004722

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