Monte Carlo optimization of redundancy of nanotechnology computer memories in the conditions of background radiation
The aim of this paper is applying statistical laws and enlargement law to determine a redundancy level of nanotechnology computers with a pre-given statistical confidence. We have tested radiation hardness of MOS memory components (commercial EPROM memory) using both Monte Carlo simulation...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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VINCA Institute of Nuclear Sciences
2018-01-01
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| Series: | Nuclear Technology and Radiation Protection |
| Subjects: | |
| Online Access: | http://www.doiserbia.nb.rs/img/doi/1451-3994/2018/1451-39941802208D.pdf |