Monte Carlo optimization of redundancy of nanotechnology computer memories in the conditions of background radiation

Monte Carlo optimization of redundancy of nanotechnology computer memories in the conditions of background radiation

The aim of this paper is applying statistical laws and enlargement law to determine a redundancy level of nanotechnology computers with a pre-given statistical confidence. We have tested radiation hardness of MOS memory components (commercial EPROM memory) using both Monte Carlo simulation...

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Bibliographic Details
Main Authors: Dolićanin Edin, Fetahović Irfan S.
Format: Article
Language:English
Published: VINCA Institute of Nuclear Sciences 2018-01-01
Series:Nuclear Technology and Radiation Protection
Subjects:
nanotechnology computer memory
optimization
redundancy
Monte Carlo simulation
radiation
Online Access:http://www.doiserbia.nb.rs/img/doi/1451-3994/2018/1451-39941802208D.pdf
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spelling doaj-c1110eb149574b8b9f844b23dc518c322020-11-24T21:53:05ZengVINCA Institute of Nuclear SciencesNuclear Technology and Radiation Protection1451-39941452-81852018-01-0133220821610.2298/NTRP1802208D1451-39941802208DMonte Carlo optimization of redundancy of nanotechnology computer memories in the conditions of background radiationDolićanin Edin0Fetahović Irfan S.1State University of Novi Pazar, Novi PazarState University of Novi Pazar, Novi PazarThe aim of this paper is applying statistical laws and enlargement law to determine a redundancy level of nanotechnology computers with a pre-given statistical confidence. We have tested radiation hardness of MOS memory components (commercial EPROM memory) using both Monte Carlo simulation method and experimental procedure. Then, by using the statistical enlargement law, we have performed the analysis of redundancy optimization of MOS structure for nanotechnology computers, under the influence of background radiation, and obtained more than satisfying results. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. 171007]http://www.doiserbia.nb.rs/img/doi/1451-3994/2018/1451-39941802208D.pdfnanotechnology computer memoryoptimizationredundancyMonte Carlo simulationradiation
collection DOAJ
language English
format Article
sources DOAJ
author Dolićanin Edin
Fetahović Irfan S.
spellingShingle Dolićanin Edin
Fetahović Irfan S.
Monte Carlo optimization of redundancy of nanotechnology computer memories in the conditions of background radiation
Nuclear Technology and Radiation Protection
nanotechnology computer memory
optimization
redundancy
Monte Carlo simulation
radiation
author_facet Dolićanin Edin
Fetahović Irfan S.
author_sort Dolićanin Edin
title Monte Carlo optimization of redundancy of nanotechnology computer memories in the conditions of background radiation
title_short Monte Carlo optimization of redundancy of nanotechnology computer memories in the conditions of background radiation
title_full Monte Carlo optimization of redundancy of nanotechnology computer memories in the conditions of background radiation
title_fullStr Monte Carlo optimization of redundancy of nanotechnology computer memories in the conditions of background radiation
title_full_unstemmed Monte Carlo optimization of redundancy of nanotechnology computer memories in the conditions of background radiation
title_sort monte carlo optimization of redundancy of nanotechnology computer memories in the conditions of background radiation
publisher VINCA Institute of Nuclear Sciences
series Nuclear Technology and Radiation Protection
issn 1451-3994
1452-8185
publishDate 2018-01-01
description The aim of this paper is applying statistical laws and enlargement law to determine a redundancy level of nanotechnology computers with a pre-given statistical confidence. We have tested radiation hardness of MOS memory components (commercial EPROM memory) using both Monte Carlo simulation method and experimental procedure. Then, by using the statistical enlargement law, we have performed the analysis of redundancy optimization of MOS structure for nanotechnology computers, under the influence of background radiation, and obtained more than satisfying results. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. 171007]
topic nanotechnology computer memory
optimization
redundancy
Monte Carlo simulation
radiation
url http://www.doiserbia.nb.rs/img/doi/1451-3994/2018/1451-39941802208D.pdf
work_keys_str_mv AT dolicaninedin montecarlooptimizationofredundancyofnanotechnologycomputermemoriesintheconditionsofbackgroundradiation
AT fetahovicirfans montecarlooptimizationofredundancyofnanotechnologycomputermemoriesintheconditionsofbackgroundradiation
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