Monte Carlo optimization of redundancy of nanotechnology computer memories in the conditions of background radiation
The aim of this paper is applying statistical laws and enlargement law to determine a redundancy level of nanotechnology computers with a pre-given statistical confidence. We have tested radiation hardness of MOS memory components (commercial EPROM memory) using both Monte Carlo simulation...
Main Authors: | Dolićanin Edin, Fetahović Irfan S. |
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Format: | Article |
Language: | English |
Published: |
VINCA Institute of Nuclear Sciences
2018-01-01
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Series: | Nuclear Technology and Radiation Protection |
Subjects: | |
Online Access: | http://www.doiserbia.nb.rs/img/doi/1451-3994/2018/1451-39941802208D.pdf |
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