Anisotropic Strain on GaN Microdisks Grown by Plasma-Assisted Molecular Beam Epitaxy
Lattice relaxation on wurtzite GaN microdisks grown by plasma-assisted molecular beam epitaxy was systematically studied. The lattice constants of GaN microdisks were evaluated from high-resolution transmission electron microscopy, and the anisotropic strain was then analyzed by observing the micros...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-10-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/10/10/899 |