Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector

Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector

In this paper, a full set of structural, optical and electrical characterizations performed on midwave infrared barrier detectors based on a Ga-free InAs/InAsSb type-II superlattice, grown by molecular beam epitaxy (MBE) on a GaSb substrate, are reported and analyzed. a Minority carrier lifetime val...

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Bibliographic Details
Main Authors: U. Zavala-Moran, M. Bouschet, J. P. Perez, R. Alchaar, S. Bernhardt, I. Ribet-Mohamed, F. de Anda-Salazar, P. Christol
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Photonics
Subjects:
midwave infrared quantum detector
barrier structure
ga-free type-II superlattice
Online Access:https://www.mdpi.com/2304-6732/7/3/76

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https://www.mdpi.com/2304-6732/7/3/76

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