Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure

Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure

A research on breakdown voltage improvement of the enhancement mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) has been carried out. A novel step-etched GaN buffer structure combined with a thin GaN buffer is studied by simulating. Both the thin GaN buffer and the step-etched GaN st...

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Bibliographic Details
Main Authors: Hao Wu, Xiaojun Fu, Yuan Wang, Jingwei Guo, Jingyu Shen, Shengdong Hu
Format: Article
Language:English
Published: Elsevier 2021-10-01
Series:Results in Physics
Subjects:
Enhancement mode high electron mobility transistor (E-mode HEMT)
GaN power device
Breakdown voltage
GaN buffer
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379721008305

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http://www.sciencedirect.com/science/article/pii/S2211379721008305

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