Displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor
The experiments of displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor are presented. The CMOS APS image sensors are manufactured in the standard 0.35 μm CMOS technology. The flux of neutron beams was about 1.33 × 108 n/cm2s. The three samples...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4889878 |