Voltage-Tunable UVC–UVB Dual-Band Metal–Semiconductor–Metal Photodetector Based on Ga2O3/MgZnO Heterostructure by RF Sputtering

Dual-band metal–semiconductor–metal (MSM) photodetectors (PDs) with a Ga2O3/MgZnO heterostructure were fabricated by radio frequency (RF) sputtering, which can detect ultraviolet C (UVC) and ultraviolet B (UVB) bands individually by controlling different...

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Main Authors:	Jie-Si Jheng, Chun-Kai Wang, Yu-Zung Chiou, Sheng-Po Chang, Shoou-Jinn Chang
Format:	Article
Language:	English
Published:	MDPI AG 2020-10-01
Series:	Coatings
Subjects:	Ga<sub>2</sub>O<sub>3</sub> MgZnO dual-band PD UVB UVC voltage-tunable
Online Access:	https://www.mdpi.com/2079-6412/10/10/994

id	doaj-c1e17af4c7054e37a6ba33f34356b681
record_format	Article
spelling	doaj-c1e17af4c7054e37a6ba33f34356b6812020-11-25T01:59:38ZengMDPI AGCoatings2079-64122020-10-011099499410.3390/coatings10100994Voltage-Tunable UVC–UVB Dual-Band Metal–Semiconductor–Metal Photodetector Based on Ga<sub>2</sub>O<sub>3</sub>/MgZnO Heterostructure by RF SputteringJie-Si Jheng0Chun-Kai Wang1Yu-Zung Chiou2Sheng-Po Chang3Shoou-Jinn Chang4Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, TaiwanDepartment of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, TaiwanDepartment of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, TaiwanInstitute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, TaiwanInstitute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, TaiwanDual-band metal–semiconductor–metal (MSM) photodetectors (PDs) with a Ga<sub>2</sub>O<sub>3</sub>/MgZnO heterostructure were fabricated by radio frequency (RF) sputtering, which can detect ultraviolet C (UVC) and ultraviolet B (UVB) bands individually by controlling different bias voltages. A PD with the annealing temperature of Ga<sub>2</sub>O<sub>3</sub> at 600 °C can improve the crystal quality of Ga<sub>2</sub>O<sub>3</sub> thin film and exhibit the least persistent photoconductivity (PPC) effect. However, a PD with the annealing temperature of Ga<sub>2</sub>O<sub>3</sub> at 600 °C cannot achieve a voltage-tunable dual-band characteristic. On the contrary, the PD without annealing can suppress the carriers from the bottom layer of MgZnO thin film at a lower bias voltage of 1 V. At this time, the peak responsivity at 250 nm was mainly dominated by the top layer of Ga<sub>2</sub>O<sub>3</sub> thin film. Then, as the bias voltage increased to 5 V, the peak detection wavelength shifted from 250 (UVC) to 320 nm (UVB). In addition, the PD with a 25 nm–thick SiO<sub>2</sub> layer inserted between Ga<sub>2</sub>O<sub>3</sub> and MgZnO thin film can achieve a broader operating bias voltage range for dual-band applications.https://www.mdpi.com/2079-6412/10/10/994Ga<sub>2</sub>O<sub>3</sub>MgZnOdual-band PDUVBUVCvoltage-tunable
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Jie-Si Jheng Chun-Kai Wang Yu-Zung Chiou Sheng-Po Chang Shoou-Jinn Chang
spellingShingle	Jie-Si Jheng Chun-Kai Wang Yu-Zung Chiou Sheng-Po Chang Shoou-Jinn Chang Voltage-Tunable UVC–UVB Dual-Band Metal–Semiconductor–Metal Photodetector Based on Ga<sub>2</sub>O<sub>3</sub>/MgZnO Heterostructure by RF Sputtering Coatings Ga<sub>2</sub>O<sub>3</sub> MgZnO dual-band PD UVB UVC voltage-tunable
author_facet	Jie-Si Jheng Chun-Kai Wang Yu-Zung Chiou Sheng-Po Chang Shoou-Jinn Chang
author_sort	Jie-Si Jheng
title	Voltage-Tunable UVC–UVB Dual-Band Metal–Semiconductor–Metal Photodetector Based on Ga<sub>2</sub>O<sub>3</sub>/MgZnO Heterostructure by RF Sputtering
title_short	Voltage-Tunable UVC–UVB Dual-Band Metal–Semiconductor–Metal Photodetector Based on Ga<sub>2</sub>O<sub>3</sub>/MgZnO Heterostructure by RF Sputtering
title_full	Voltage-Tunable UVC–UVB Dual-Band Metal–Semiconductor–Metal Photodetector Based on Ga<sub>2</sub>O<sub>3</sub>/MgZnO Heterostructure by RF Sputtering
title_fullStr	Voltage-Tunable UVC–UVB Dual-Band Metal–Semiconductor–Metal Photodetector Based on Ga<sub>2</sub>O<sub>3</sub>/MgZnO Heterostructure by RF Sputtering
title_full_unstemmed	Voltage-Tunable UVC–UVB Dual-Band Metal–Semiconductor–Metal Photodetector Based on Ga<sub>2</sub>O<sub>3</sub>/MgZnO Heterostructure by RF Sputtering
title_sort	voltage-tunable uvc–uvb dual-band metal–semiconductor–metal photodetector based on ga<sub>2</sub>o<sub>3</sub>/mgzno heterostructure by rf sputtering
publisher	MDPI AG
series	Coatings
issn	2079-6412
publishDate	2020-10-01
description	Dual-band metal–semiconductor–metal (MSM) photodetectors (PDs) with a Ga<sub>2</sub>O<sub>3</sub>/MgZnO heterostructure were fabricated by radio frequency (RF) sputtering, which can detect ultraviolet C (UVC) and ultraviolet B (UVB) bands individually by controlling different bias voltages. A PD with the annealing temperature of Ga<sub>2</sub>O<sub>3</sub> at 600 °C can improve the crystal quality of Ga<sub>2</sub>O<sub>3</sub> thin film and exhibit the least persistent photoconductivity (PPC) effect. However, a PD with the annealing temperature of Ga<sub>2</sub>O<sub>3</sub> at 600 °C cannot achieve a voltage-tunable dual-band characteristic. On the contrary, the PD without annealing can suppress the carriers from the bottom layer of MgZnO thin film at a lower bias voltage of 1 V. At this time, the peak responsivity at 250 nm was mainly dominated by the top layer of Ga<sub>2</sub>O<sub>3</sub> thin film. Then, as the bias voltage increased to 5 V, the peak detection wavelength shifted from 250 (UVC) to 320 nm (UVB). In addition, the PD with a 25 nm–thick SiO<sub>2</sub> layer inserted between Ga<sub>2</sub>O<sub>3</sub> and MgZnO thin film can achieve a broader operating bias voltage range for dual-band applications.
topic	Ga<sub>2</sub>O<sub>3</sub> MgZnO dual-band PD UVB UVC voltage-tunable
url	https://www.mdpi.com/2079-6412/10/10/994
work_keys_str_mv	AT jiesijheng voltagetunableuvcuvbdualbandmetalsemiconductormetalphotodetectorbasedongasub2subosub3submgznoheterostructurebyrfsputtering AT chunkaiwang voltagetunableuvcuvbdualbandmetalsemiconductormetalphotodetectorbasedongasub2subosub3submgznoheterostructurebyrfsputtering AT yuzungchiou voltagetunableuvcuvbdualbandmetalsemiconductormetalphotodetectorbasedongasub2subosub3submgznoheterostructurebyrfsputtering AT shengpochang voltagetunableuvcuvbdualbandmetalsemiconductormetalphotodetectorbasedongasub2subosub3submgznoheterostructurebyrfsputtering AT shooujinnchang voltagetunableuvcuvbdualbandmetalsemiconductormetalphotodetectorbasedongasub2subosub3submgznoheterostructurebyrfsputtering
_version_	1724963392145326080

Voltage-Tunable UVC–UVB Dual-Band Metal–Semiconductor–Metal Photodetector Based on Ga<sub>2</sub>O<sub>3</sub>/MgZnO Heterostructure by RF Sputtering

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