150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers
A rating voltage of 150 and 200 V split-gate trench (SGT) power metal-oxide- semiconductor field-effect transistor (Power MOSFET) with different epitaxial layers was proposed and studied. In order to reduce the specific on-resistance (R<sub>on,sp</sub>) of a 150 and 200 V SGT power MOSFE...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-05-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/11/5/504 |