Contribution of NIEL for Gain Degradation (β) in Si8+ Ion Irradiated Silicon Power Transistor
The concept of non-ionizing energy loss (NIEL) has been found useful for characterizing displacement damage defects in materials and devices. When NPN power transistors (2N6688 manufactured by BEL, India) are exposed for 110 MeV Si8+ ion irradiation in the fluence range 5 x 109 to 1 x 1013 ions cm-2...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IFSA Publishing, S.L.
2008-12-01
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| Series: | Sensors & Transducers |
| Subjects: | |
| Online Access: | http://www.sensorsportal.com/HTML/DIGEST/december_08/Special_issue/P_SI_60.pdf |