Fabrication of p-n Junction With an n-Type Silicon Nanoparticle Layer by Using Infrared Fiber Laser Illumination

Fabrication of p-n Junction With an n-Type Silicon Nanoparticle Layer by Using Infrared Fiber Laser Illumination

This paper investigates the manufacturability-aware process of p-n junction formation for photovoltaic cells involving with Si nanoparticle layer. The furnace-based dopant diffusion process of forming a p-n junction consumes a substantial amount of energy. In addition, repetitive production steps pr...

Full description

Bibliographic Details
Main Authors: Hung-Fei Kuo, Ben Shen Deng, Jen-Yu Fang
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Access
Subjects:
Flexible photovoltaic cell
silicon nanoparticle
silicon ink
spin-on dopant (SOD)
carbon nanoparticle
pn junction
Online Access:https://ieeexplore.ieee.org/document/7588106/

Internet

https://ieeexplore.ieee.org/document/7588106/

Similar Items