Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy
Polarized Raman spectra of a β-FeSi2(100)//Si(001) epitaxial film grown by molecular beam epitaxy were measured to identify the Raman mode of the observed Raman active lines. Twelve of the observed 18 Raman lines showed a clear dependence of the Raman intensity on the crystal rotation angle. By fact...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5042801 |