Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy
Polarized Raman spectra of a β-FeSi2(100)//Si(001) epitaxial film grown by molecular beam epitaxy were measured to identify the Raman mode of the observed Raman active lines. Twelve of the observed 18 Raman lines showed a clear dependence of the Raman intensity on the crystal rotation angle. By fact...
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doaj-c32a256c710b490cbc09902ab46a4b4a2020-11-25T02:27:32ZengAIP Publishing LLCAIP Advances2158-32262018-10-01810105028105028-910.1063/1.5042801100810ADVPolarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxyYoshikazu Terai0Haruki Yamaguchi1Hiroaki Tsukamoto2Naoki Murakoso3Hirofumi Hoshida4Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, JapanGraduate School of Science and Engineering, Kagoshima University, Kagoshima 890-0065, JapanGraduate School of Science and Engineering, Kagoshima University, Kagoshima 890-0065, JapanDepartment of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, JapanDepartment of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, JapanPolarized Raman spectra of a β-FeSi2(100)//Si(001) epitaxial film grown by molecular beam epitaxy were measured to identify the Raman mode of the observed Raman active lines. Twelve of the observed 18 Raman lines showed a clear dependence of the Raman intensity on the crystal rotation angle. By factor group analysis using the orthorhombic symmetry D2h18 of β-FeSi2, five Raman lines (193, 200, 249, 401, 494 cm-1) and seven lines (175, 277, 284, 298, 327, 410, 442 cm-1) were completely assigned to the Ag and B3g modes, respectively. The depolarization ratio of Raman scattering intensities was obtained from polarized Raman spectra measured in two polarization configurations. The values of the depolarization ratio also support the assignment of the Ag and B3g modes in β-FeSi2.http://dx.doi.org/10.1063/1.5042801 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Yoshikazu Terai Haruki Yamaguchi Hiroaki Tsukamoto Naoki Murakoso Hirofumi Hoshida |
spellingShingle |
Yoshikazu Terai Haruki Yamaguchi Hiroaki Tsukamoto Naoki Murakoso Hirofumi Hoshida Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy AIP Advances |
author_facet |
Yoshikazu Terai Haruki Yamaguchi Hiroaki Tsukamoto Naoki Murakoso Hirofumi Hoshida |
author_sort |
Yoshikazu Terai |
title |
Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy |
title_short |
Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy |
title_full |
Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy |
title_fullStr |
Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy |
title_full_unstemmed |
Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy |
title_sort |
polarized raman spectra of β-fesi2 epitaxial film grown by molecular beam epitaxy |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2018-10-01 |
description |
Polarized Raman spectra of a β-FeSi2(100)//Si(001) epitaxial film grown by molecular beam epitaxy were measured to identify the Raman mode of the observed Raman active lines. Twelve of the observed 18 Raman lines showed a clear dependence of the Raman intensity on the crystal rotation angle. By factor group analysis using the orthorhombic symmetry D2h18 of β-FeSi2, five Raman lines (193, 200, 249, 401, 494 cm-1) and seven lines (175, 277, 284, 298, 327, 410, 442 cm-1) were completely assigned to the Ag and B3g modes, respectively. The depolarization ratio of Raman scattering intensities was obtained from polarized Raman spectra measured in two polarization configurations. The values of the depolarization ratio also support the assignment of the Ag and B3g modes in β-FeSi2. |
url |
http://dx.doi.org/10.1063/1.5042801 |
work_keys_str_mv |
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