Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy

Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy

Polarized Raman spectra of a β-FeSi2(100)//Si(001) epitaxial film grown by molecular beam epitaxy were measured to identify the Raman mode of the observed Raman active lines. Twelve of the observed 18 Raman lines showed a clear dependence of the Raman intensity on the crystal rotation angle. By fact...

Full description

Bibliographic Details
Main Authors: Yoshikazu Terai, Haruki Yamaguchi, Hiroaki Tsukamoto, Naoki Murakoso, Hirofumi Hoshida
Format: Article
Language:English
Published: AIP Publishing LLC 2018-10-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5042801
id doaj-c32a256c710b490cbc09902ab46a4b4a
record_format Article
spelling doaj-c32a256c710b490cbc09902ab46a4b4a2020-11-25T02:27:32ZengAIP Publishing LLCAIP Advances2158-32262018-10-01810105028105028-910.1063/1.5042801100810ADVPolarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxyYoshikazu Terai0Haruki Yamaguchi1Hiroaki Tsukamoto2Naoki Murakoso3Hirofumi Hoshida4Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, JapanGraduate School of Science and Engineering, Kagoshima University, Kagoshima 890-0065, JapanGraduate School of Science and Engineering, Kagoshima University, Kagoshima 890-0065, JapanDepartment of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, JapanDepartment of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, JapanPolarized Raman spectra of a β-FeSi2(100)//Si(001) epitaxial film grown by molecular beam epitaxy were measured to identify the Raman mode of the observed Raman active lines. Twelve of the observed 18 Raman lines showed a clear dependence of the Raman intensity on the crystal rotation angle. By factor group analysis using the orthorhombic symmetry D2h18 of β-FeSi2, five Raman lines (193, 200, 249, 401, 494 cm-1) and seven lines (175, 277, 284, 298, 327, 410, 442 cm-1) were completely assigned to the Ag and B3g modes, respectively. The depolarization ratio of Raman scattering intensities was obtained from polarized Raman spectra measured in two polarization configurations. The values of the depolarization ratio also support the assignment of the Ag and B3g modes in β-FeSi2.http://dx.doi.org/10.1063/1.5042801
collection DOAJ
language English
format Article
sources DOAJ
author Yoshikazu Terai
Haruki Yamaguchi
Hiroaki Tsukamoto
Naoki Murakoso
Hirofumi Hoshida
spellingShingle Yoshikazu Terai
Haruki Yamaguchi
Hiroaki Tsukamoto
Naoki Murakoso
Hirofumi Hoshida
Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy
AIP Advances
author_facet Yoshikazu Terai
Haruki Yamaguchi
Hiroaki Tsukamoto
Naoki Murakoso
Hirofumi Hoshida
author_sort Yoshikazu Terai
title Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy
title_short Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy
title_full Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy
title_fullStr Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy
title_full_unstemmed Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy
title_sort polarized raman spectra of β-fesi2 epitaxial film grown by molecular beam epitaxy
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2018-10-01
description Polarized Raman spectra of a β-FeSi2(100)//Si(001) epitaxial film grown by molecular beam epitaxy were measured to identify the Raman mode of the observed Raman active lines. Twelve of the observed 18 Raman lines showed a clear dependence of the Raman intensity on the crystal rotation angle. By factor group analysis using the orthorhombic symmetry D2h18 of β-FeSi2, five Raman lines (193, 200, 249, 401, 494 cm-1) and seven lines (175, 277, 284, 298, 327, 410, 442 cm-1) were completely assigned to the Ag and B3g modes, respectively. The depolarization ratio of Raman scattering intensities was obtained from polarized Raman spectra measured in two polarization configurations. The values of the depolarization ratio also support the assignment of the Ag and B3g modes in β-FeSi2.
url http://dx.doi.org/10.1063/1.5042801
work_keys_str_mv AT yoshikazuterai polarizedramanspectraofbfesi2epitaxialfilmgrownbymolecularbeamepitaxy
AT harukiyamaguchi polarizedramanspectraofbfesi2epitaxialfilmgrownbymolecularbeamepitaxy
AT hiroakitsukamoto polarizedramanspectraofbfesi2epitaxialfilmgrownbymolecularbeamepitaxy
AT naokimurakoso polarizedramanspectraofbfesi2epitaxialfilmgrownbymolecularbeamepitaxy
AT hirofumihoshida polarizedramanspectraofbfesi2epitaxialfilmgrownbymolecularbeamepitaxy
_version_ 1724842427677671424

Similar Items