Impacts of HfO<sub>2</sub>/ZnO Stack-Structured Charge-Trap Layers Controlled by Atomic Layer Deposition on Nonvolatile Memory Characteristics of In-Ga-Zn-O Channel Charge-Trap Memory Thin-Film Transistors

Impacts of HfO<sub>2</sub>/ZnO Stack-Structured Charge-Trap Layers Controlled by Atomic Layer Deposition on Nonvolatile Memory Characteristics of In-Ga-Zn-O Channel Charge-Trap Memory Thin-Film Transistors

We fabricated the charge-trap memory thin film transistors (CTM-TFTs) using InGaZnO (IGZO) active channel and HfO<sub>2</sub>/ZnO stack-structured charge-trap layer (CTL). To investigate the effects of the number and thickness of HfO<sub>2</sub> layers inserted between the Zn...

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Bibliographic Details
Main Authors: So-Yeong Na, Sung-Min Yoon
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
High-k material
HfO₂
ZnO
ALD
IGZO charge-trap memory
Online Access:https://ieeexplore.ieee.org/document/8681197/

Internet

https://ieeexplore.ieee.org/document/8681197/

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