Impacts of HfO<sub>2</sub>/ZnO Stack-Structured Charge-Trap Layers Controlled by Atomic Layer Deposition on Nonvolatile Memory Characteristics of In-Ga-Zn-O Channel Charge-Trap Memory Thin-Film Transistors
We fabricated the charge-trap memory thin film transistors (CTM-TFTs) using InGaZnO (IGZO) active channel and HfO<sub>2</sub>/ZnO stack-structured charge-trap layer (CTL). To investigate the effects of the number and thickness of HfO<sub>2</sub> layers inserted between the Zn...
Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2019-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8681197/ |