Design investigation to improve voltage swing and bandwidth of the SiGe driver circuit for a silicon electro-optic ring modulator
This paper reports on a new SiGe driver IC to address the low breakdown voltage level of modern BiCMOS transistors. An optical modulator driver IC in SiGe 250 nm technology with a supply voltage of 4.5 V is presented. This driver IC consists of pre- and main driver stages where a newly modified casc...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | deu |
| Published: |
Copernicus Publications
2015-11-01
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| Series: | Advances in Radio Science |
| Online Access: | http://www.adv-radio-sci.net/13/121/2015/ars-13-121-2015.pdf |