Fabrication of single-electron transistors with electromigrated Ni nanogaps
We analyze single-electron transistors (SETs) fabricated with electromigrated Ni nanogaps using the Korotkov and Nazarov (KN) model. First, we investigate nanogap-based SETs consisting of multiple Ni islands placed between the source and drain electrodes by a field-emission-induced electromigration...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5031822 |