Superior polarization retention through engineered domain wall pinning
The use of ferroelectric materials in memory device applications is held back by low retention times. Here, the authors demonstrate that by intentionally introducing defective nanoregions which increase the activation field for domain wall motion, retention times larger than a year can be achieved.
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2020-01-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-019-14250-7 |