Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength

Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength

An erbium-doped silicon transistor prepared by ion implantation and co-doped with oxygen is investigated by photocurrent generation in the telecommunication range. The photocurrent is explored at room temperature as a function of the wavelength by using a supercontinuum laser source working in the &...

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Bibliographic Details
Main Authors: Michele Celebrano, Lavinia Ghirardini, Marco Finazzi, Giorgio Ferrari, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takahiro Shinada, Takashi Tanii, Enrico Prati
Format: Article
Language:English
Published: MDPI AG 2019-03-01
Series:Nanomaterials
Subjects:
erbium
silicon transistor
photocurrent
Online Access:http://www.mdpi.com/2079-4991/9/3/416

Internet

http://www.mdpi.com/2079-4991/9/3/416

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