GaAs/AlGaAs-Based 870-nm-Band Widely Tunable Edge-Emitting V-Cavity Laser
An 870-nm-band wavelength tunable edge-emitting semiconductor laser based on V-coupled cavities in a GaAs/AlGaAs material system is presented. It does not involve any grating or epitaxial regrowth. Using a single electrode control, 31-channel wavelength tuning with a channel spacing of about 0.38 nm...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2013-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/6600963/ |